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| DC COMPONENTS CO., LTD. R BF422 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for video B-class power stages in TV receivers. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 250 250 5 50 830 +150 -55 to +150 Unit V V V mA mW o o .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 250 250 5 50 60 2% Typ - Max 0.1 10 0.6 - Unit V V V A A V - Test Conditions IC=100A IC=1mA IE=10A VCB=200V VEB=5V IC=30mA, IB=3mA IC=25mA, VCE=20V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain (1) VCE(sat) hFE fT Transition Frequency (1)Pulse Test: Pulse Width MHz IE=10mA, VCE=10V, f=100MHz 380s, Duty Cycle |
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